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General expression for the temperature coefficient of resistivity of polycrystalline semi-metal films

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Abstract

After calculating the different contributions to the resistivity of a thin film, a general expression for the temperature coefficient of resistivity in a polycrystalline semi-metal film is derived by taking into consideration the influence of internal size effects on the film resistivity in terms of the Mayadas-Shatzkes function, thermal strains and the difference in the thermal expansion coefficients between the film and its substrate. A comparison with experimental data, in the temperature range 77 to 500 K, over grain size range 30 to 200 nm, for antimony films, 200 nm thick, is made. Good agreement has been found between experiments and the theoretical equations we proposed.

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Authors and Affiliations

  1. Laboratoire de Physique Appliquée, Université des Sciences et Techniques du Languedoc, Place E, Bataillon, 34060, Montpellier Cedex, France

    D. Deschacht & A. Boyer

Authors
  1. D. Deschacht
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  2. A. Boyer
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Deschacht, D., Boyer, A. General expression for the temperature coefficient of resistivity of polycrystalline semi-metal films. J Mater Sci 20, 807–811 (1985). https://doi.org/10.1007/BF00585718

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  • DOI: https://doi.org/10.1007/BF00585718

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