Journal of Materials Science

, Volume 25, Issue 9, pp 3910–3916 | Cite as

Electrical resistivity changes due to interstitial hydrogen in palladium-rich substitutional alloys

  • K. Baba
  • U. Miyagawa
  • K. Watanabe
  • Y. Sakamoto
  • T. B. Flanagan


The changes in electrical resistivity of palladium solid solution alloys (alloying element = silver, gold, copper, yttrium, cerium, titanium, zirconium, vanadium, niobium and tantalum) with hydrogen concentration were measured at 301 K up to aboutr(H/M) = 1.5×10−2; the hydrogen was introduced by electrolysis and measurements of electrode potential were also made. The specific electrical resistivity increment per unit change of hydrogen concentration, ∂Δϱ1∂r, generally increases with increase of the solute contents, although for silver, gold and copper there are no notable changes in the slopes with their concentrations. The increase in ∂Δ/g9/∂r with the alloying contents cannot be related to the lattice “dilatation” effect due to the solute, but it is associated approximately with a decrease in the density-of-states at the Fermi level caused by pre-filling of the 4 d band of palladium by the solute atoms.


Zirconium Vanadium Palladium Cerium Niobium 
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Copyright information

© Chapman and Hall Ltd. 1990

Authors and Affiliations

  • K. Baba
    • 1
  • U. Miyagawa
    • 1
  • K. Watanabe
    • 1
  • Y. Sakamoto
    • 1
  • T. B. Flanagan
    • 2
  1. 1.Department of Materials Science and EngineeringNagasaki UniversityNagasakiJapan
  2. 2.Department of ChemistryThe University of VermontBurlingtonUSA

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