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Diamond deposition on cemented carbide by chemical vapour deposition using a tantalum filament

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Abstract

Diamond deposition on WC-Co cemented carbide was examined by chemical vapour deposition using a tantalum filament. The filament was much superior to conventional tungsten filament for high-temperature use. Diamond film was deposited at a filament temperature up to about 2600 °C for tantalum filament, which was much higher than the maximum filament temperature available for tungsten (2000 °C). The critical methane concentration in H2-CH4 gas for diamond deposition became higher with increasing filament temperature. A deposition rate about 20 times higher was obtained when using a tantalum filament compared with a tungsten filament. The origin of the improved deposition rate of diamond on WC-Co substrate using a tantalum filament is discussed.

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Authors and Affiliations

  1. Research Centre for Advanced Science and Technology, The University of Tokyo, Meguro-ku Komaba, 153, Tokyo, Japan

    H. Matsubara

  2. Department of Materials Science, Faculty of Engineering, The University of Tokyo, Bunkyo-ku Hongo, 113, Tokyo, Japan

    T. Sakuma

Authors
  1. H. Matsubara
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  2. T. Sakuma
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Matsubara, H., Sakuma, T. Diamond deposition on cemented carbide by chemical vapour deposition using a tantalum filament. J Mater Sci 25, 4472–4476 (1990). https://doi.org/10.1007/BF00581110

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  • DOI: https://doi.org/10.1007/BF00581110

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