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Optical and Quantum Electronics

, Volume 28, Issue 1, pp 17–23 | Cite as

Self-detection of lasing characteristics for semiconductor ring laser diodes

  • M. Ikeda
  • Y. Maeda
  • K. Murakami
Papers

Abstract

A novel method of measurement of lasing characteristics for a ring laser diode is proposed without branching of the optical lasing power. The lasing power and the linewidth as a function of the injection current have been measured by detecting the RF power by the terminal voltage change of a ring LD. The linewidth is estimated to be 55 kHz atl=1.75lth.

Keywords

Communication Network Lasing Power Laser Diode Injection Current Ring Laser 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1996

Authors and Affiliations

  • M. Ikeda
    • 1
  • Y. Maeda
    • 1
  • K. Murakami
    • 1
  1. 1.Department of Electronics and Electrical EngineeringFukuyama UniversityFukuyama, HiroshimaJapan

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