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The epitaxy of zinc sulphide on silicon

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Abstract

The epitaxy of zinc sulphide films on silicon has been studied by means of X-ray and electron diffraction and by scanning electron microscopy. Results have shown that due to the nature of the stacking of atoms, planar defects will predominate in such a sphalerite structure material; this is similar to the results of Pashley and Stowell on face centred cubic metals. Such defects have been shown to be more prevalent on (111) and (110) orientations, compared with the (100) orientation which gave the best epitaxial single crystal films. These results agree with other work from this laboratory on the epitaxy of zinc selenide on germanium and silicon.

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Authors and Affiliations

  1. Signals Research and Development Establishment, Ministry of Technology, Christchurch, Hampshire, UK

    T. G. R. Rawlins

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  1. T. G. R. Rawlins
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Rawlins, T.G.R. The epitaxy of zinc sulphide on silicon. J Mater Sci 5, 881–890 (1970). https://doi.org/10.1007/BF00574860

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  • DOI: https://doi.org/10.1007/BF00574860

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