Abstract
An etching and electron microscopy study has been carried out on {111} oriented slices of gallium phosphide (GaP) taken from Czochralski-grown ingots. The correlation of the etched structure with substructural defects as revealed by transmission electron microscopy has been determined, It has been found that GaP grown by this technique has a high dislocation density and exhibits polygonisation and mechanical twinning. It is found that there is a one-to-one correspondence between surface etch pits and grown-in and mechanically induced dislocations. Stacking faults are also revealed in the etching studies and are shown to be twins in the matrix of the {111} 〈112〉 type. It is proposed that the twinning occurs due to the severe growth conditions and may arise by dissociation of dislocations in the sub-boundaries.
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References
S. J. Bass andP. E. Oliver,J. Cryst. Growth 34 (1968) 286.
S. J. Bass, P. E. Oliver, andJ. E. Birkbeck,ibid 2 (1968) 169.
R. A. Logan, H. G. White, andF. A. Trumbore,J. Appl. Phys. 38 (1967) 2500.
R. H. Saul,J. Electrochem. Soc. 115 (1968) 1184.
M. Gershenzon andR. M. Mikulyak,J. Appl. Phys. 35 (1964) 2132.
M. M. Cohen andF. D. Bedard,ibid 39 (1968) 75.
C. J. Buiocchi,ibid 38 (1967) 1980.
D. Laister andG. M. jenkins,Solid State Electron, to be published.
G. R. Booker,Phil. Mag. 11 (1965) 1007.
M. S. Abrahams andC. J. Buiocchi,J. Phys. Chem. Solids 28 (1967) 927.
A. Steinemann andU. Zimmerli,Solid State Electron 6 (1963) 597.
T. H. Blewitt, R. R. Coltmann, C. E. Klabunde andT. S. Noggle J. Appl. Phys. 28 (1957) 639.
G. L. Pearson andF. L. Vogel,Prog. in Semiconductors 6 (1962) 1.
A. T. Churchman, G. A. Geach, andJ. Winton,Proc. Roy. Soc. (London) A238 (1956) 194.
E. Biedermann andK. Brack,J. Electrochem. Soc. 113 (1966) 1088.
J. Hornstra,J. Phys. Chem. Solids 5 (1958) 129.
P. B. Hirsch, A, Howie, R. B. Nicholson, D. W. Pashley andM. J. Whelan, “Electron Microscopy of Thin Crystals” (Butterworth, London, 1965) p. 142.
D. B. Holt,J. Mater. Sci. 4 (1969) 935.
S. Mahajan, D. E. Barry andB. L. Eyre,Phil. Mag. 21 (1970) 43.
J. A. Venables, “Deformation Twinning”, Met. Soc. Conf. AIME25 (Gordon and Breach, London and NY, 1964).
M. S. Abrahams, C. J. Buiocchi andJ. J. Tietjen,J. Appl. Phys. 38 (1967) 760.
D. Laister andG. M. Jenkins,J. Mater. Sci. 3 (1968) 584.
M. E. Straumanis andC. D. Kim,Acta Cryst. 19 (1965) 256.
G. R. Booker andR. Stickler,Acta Met. 10 (1962) 993.
D. Laister, PhD Thesis, University of Wales (1969) 192.
M. V. Klassen-Neklyudova, “Mechanical Twinning of Crystals” (Consultants Bureau, New York, 1964) p. 69.
A. H. Cottrell andB. A. Bilby,Phil. Mag. 42 (1951) 573.
R. W. Cahn, “Deformation Twinning”, Met Soc. Conf., AIME25 (Gordon and Breach, London and NY, 1964) p. 19.
D. Calais, P. Lacombe andN. Simenel,Mem. Sci. Rev. Metallurgie 56 (1959) 261.
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Laister, D., Jenkins, G.M. Dislocations and twins in Czochralski-grown gallium phosphide single crystals. J Mater Sci 5, 862–868 (1970). https://doi.org/10.1007/BF00574857
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DOI: https://doi.org/10.1007/BF00574857