Theoretical and Experimental Chemistry

, Volume 28, Issue 2, pp 126–129 | Cite as

Cluster models of interaction of a fluorine atom with the (111) face of silicon

  • G. E. Groshev
  • A. B. Svechnikov
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Abstract

The AMI method has been used in calculating activation energies of desorption of surface complexes from the (111) face of silicon. For the desorption of a surface Si atom, the desorption of an FSi radical containing this Si atom when a fluorine atom implanted in the surface layer is present, and the desorption of the FSi radical when such a fluorine atom is not present, the values found for the activation energy are 8.0, 0.9, and 6.4 eV, respectively.

Keywords

Silicon Activation Energy Surface Layer Fluorine Surface Complex 

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Copyright information

© Plenum Publishing Corporation 1993

Authors and Affiliations

  • G. E. Groshev
    • 1
  • A. B. Svechnikov
    • 1
  1. 1.I. V. Kurchatov Institute of Atomic EnergyMoscow

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