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Potentiometry on MIM-structures with a STM

Potentiometrie mit dem Rastertunnelmikroskop an MIM-Strukturen

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Summary

The scanning tunneling microscope is used to trace simultaneously the topography and the potential distribution in the microslit of an electroformed MIM diode. A thin conductive layer, not seen in a scanning electron microscope is found. The conductivity in the layer cannot be estimated but it seems to be higher than the conductivity perpendicular to the layer plane.

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References

  1. Blessing R, Pagnia H (1978) Thin Solid Films 52:333

    Google Scholar 

  2. Blessing R, Pagnia H, Sotnik N (1981) Thin Solid Films 85:119

    Google Scholar 

  3. Pagnia H, Schnellbächer J Sotnik N (1985) Phys Status Solidi A 87:709

    Google Scholar 

  4. Pagnia H, Schlemper K, Sotnik N (1987) Mat Lett 5:260

    Google Scholar 

  5. Muralt P, Pohl W (1986) Appl Phys Lett 48:514

    Google Scholar 

  6. Muralt P, Pohl DW, Denk W (1986) IBM J Res Dev 30:443

    Google Scholar 

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Bräuer, S., Pagnia, H., Rücker, M. et al. Potentiometry on MIM-structures with a STM. Z. Anal. Chem. 333, 337–339 (1989). https://doi.org/10.1007/BF00572322

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  • DOI: https://doi.org/10.1007/BF00572322

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