Summary
The CAMECA IMS 4F operates in the microprobe and microscope modes with submicron lateral resolutions. The high useful yields obtained via the appropriate primary ion beam species and high transmission ion optical system give access to trace analysis in small structures. As an example, a depth profile of arsenic in silicon performed at 5,000 mass resolution in a 8 μm2 area allows detection of 1.1016 at/cm3 (0.2 ppm).
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References
Migeon HN, Le Pipec C, Le Goux JJ (1986) In: Benninghoven A, Colton RJ, Simons DS, Werner HW (eds) Secondary ion mass spectrometry, SIMS V. Springer, Berlin Heidelberg New York, p 155
Slodzian G (1980) In: Septier A (ed) Applied charged particule optics. Academic Press, New York
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Migeon, H.N., Schuhmacher, M., Le Goux, J.J. et al. Three-dimensional analysis of trace elements with the CAMECA IMS 4F. Z. Anal. Chem. 333, 333–334 (1989). https://doi.org/10.1007/BF00572320
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DOI: https://doi.org/10.1007/BF00572320