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Journal of Materials Science

, Volume 28, Issue 19, pp 5335–5339 | Cite as

Undoped and indium-doped CdS films prepared by chemical vapour deposition

  • G. Meyer
  • J. Saura
Papers

Abstract

Undoped and In-doped films of CdS were deposited at different temperatures by the chemical vapour deposition technique on glass and In-coated (30 nm) glass, respectively. Both kinds of film present a columnar microstructure, low porosity and good adherence to the substrate. The doped films have higher electron mobility values compared with the undoped ones. Shifts in the transmission spectra (Moss-Burstein effect) were observed with increased doping. Small crystals grew over the doped films during the deposition stage, mainly at the higher substrate temperatures.

Keywords

Chemical Vapour Deposition Substrate Temperature Transmission Spectrum Good Adherence Electron Mobility 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    K. L. Chopra andS. R. Das, in “Thin Film Solar Cells” (Plenum, New York, 1979) p. 424.Google Scholar
  2. 2.
    C. Paorici, C. Pelosi, G. Bolzoni andG. Zucalli,J. Mater. Sci. 10 (1975) 2117.Google Scholar
  3. 3.
    M. Bettini, K. J. Bachmann andJ. L. Shay,J. Appl. Phys. 49 (1978) 865.Google Scholar
  4. 4.
    S. Wagner, J. L. Shay, K. J. Bachmann andE. Buehler,Appl. Phys. Lett. 26 (1975) 229.Google Scholar
  5. 5.
    K. Ito andT. Ohsawa,Jpn. J. Appl. Phys. 14 (1975) 1259.Google Scholar
  6. 6.
    M. Bettini, K. J. Bachmann, E. Buehler, J. L. Shay andS. Wagner,J. Appl. Phys. 48 (1977) 1603.Google Scholar
  7. 7.
    A. M. Mancini, N. Lovergine, C. De Blasi andL. Vasanelli,Nuovo Cimento 10 (1988) 57.Google Scholar
  8. 8.
    K. Yamaguchi, N. Nakayama, H. Matsumoto andS. Ikegami,Jpn. J. Appl. Phys. 16 (1977) 1203.Google Scholar
  9. 9.
    N. Romeo,J. Cryst. Growth 52 (1981) 692.Google Scholar
  10. 10.
    E. Bertran, J. L. Morenza, J. Esteve andJ. M. Codina,J. Phys. D: Appl. Phys. 17 (1984) 1679.Google Scholar
  11. 11.
    T. Hayashi, T. Nishikura, T. Suzuki andY. Ema,J. Appl. Phys. 64 (1988) 3542.Google Scholar
  12. 12.
    E. Burstein,Phys. Rev. 93 (1954) 632.Google Scholar
  13. 13.
    T. Weng,J. Electrochem. Soc. 126 (1979) 1820.Google Scholar
  14. 14.
    P. Vaccaro andJ. Saura,J. Mater. Sci. Lett. 9 (1990) 47.Google Scholar
  15. 15.
    P. Vaccaro, G. Meyer andJ. Saura,J. Phys. D: Appl. Phys. 24 (1991) 1886.Google Scholar

Copyright information

© Chapman & Hall 1993

Authors and Affiliations

  • G. Meyer
    • 1
  • J. Saura
    • 1
  1. 1.Centro Atómico BarilocheS.C. de BarilocheArgentina

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