Journal of Materials Science

, Volume 28, Issue 19, pp 5313–5316 | Cite as

Configuration and crystallization ofa-C∶H Film on Ge and Si substrates

  • Zhiyuan Liu
  • Renji Zhang
  • Maili Liu
  • Gongneng Yang
  • Qihai Liu
  • Ruobao Wang
  • Wandi Wang
  • Wanxin Ji
  • Xiuyan Ji
  • Da -Ren He
Papers
  • 24 Downloads

Abstract

Infrared and Raman analyses on the configuration of hydrogenated amorphous carbon (a-C∶H) thin films on monocrystalline Ge and Si substrates have been carried out. Models of the short range order and of the non-equilibrium crystallization aggregation of the films are proposed based on the analysis results and previous works by Smith [1, 2], Lu and Wang [3] and Witten and Sander [4]. The computer simulated aggregates, according to the models, are fractals with the dimension 1.81±0.06. The films have been crystallized by laser illustration quenching. The fractal dimension of the experimentally obtained aggregates is in agreement with the simulation result.

Keywords

Polymer Crystallization Thin Film Fractal Dimension Short Range 

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References

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Copyright information

© Chapman & Hall 1993

Authors and Affiliations

  • Zhiyuan Liu
    • 1
  • Renji Zhang
    • 2
  • Maili Liu
    • 1
  • Gongneng Yang
    • 1
  • Qihai Liu
    • 1
  • Ruobao Wang
    • 1
  • Wandi Wang
    • 1
  • Wanxin Ji
    • 1
  • Xiuyan Ji
    • 1
  • Da -Ren He
    • 3
  1. 1.Department of PhysicsNorthwest UniversityXianPeople's Republic of China
  2. 2.Mechanical Engineering DepartmentTsinghua UniversityBeijingPeople's Republic of China
  3. 3.Department of Physics, Northwest University and Structure Research Laboratory, University of Science and Technology of ChinaAcademia SinicaHeifeiPeople's Republic of China

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