Ordering of crystal structure by ionizing radiation

Abstract

We have studied the action of ionizing radiation on defect-containing semiconductor crystals, metals, and alloys. Using modern methods for investigation of solids, Rutherford back scattering of channeled charged particles, x-ray diffraction, electron microscopy, and also calorimetric methods, we have established: a) irradiation (by x-ray beams, gamma rays, and electrons) of metals and alloys with an equivalent radiation dose less than 10⁵ J/kg and of semiconductor crystals with a dose less than 10³ J/kg does not lead to additional accumulation of defects but conversely leads to elimination of defects and transition of the crystal to a more equilibrium state; b) ionization processes play a determining role in rearrangment of defects in crystals exhibiting both semiconductor and metallic conductivity. We show that rearrangment of the crystal occurs as a result of stored energy in the crystal which is liberated due to chain reactions of annihilation of defects, initiated by ionization. Transition of the crystal to the equilibrium state is accompanied by improvement of its physical properties.