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Hyperfine Interactions

, Volume 79, Issue 1–4, pp 655–658 | Cite as

Interstitial related defect of12B implanted into n- and p-type silicon

  • H. -P. Frank
  • T. Almeida
  • E. Diehl
  • K. -H. Ergezinger
  • B. Fischer
  • B. Ittermann
  • F. Mai
  • W. Seelinger
  • S. Weissenmayer
  • G. Welker
  • H. Ackermann
  • H. -J. Stöckmann
Section III.3: Semiconductors

Abstract

β-radiation detected nuclear magnetic resonance (β-NMR) measurements of12B occupying sites with noncubic surroundings after implantation into Si have been extended from p-type to moderately doped n-type material. The quadrupole split signals observed in both materials indicate the existence of the same interstitial related boron defect but with lower thermal stability in n-type Si.

Keywords

Silicon Thin Film Boron Nuclear Magnetic Resonance Thermal Stability 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© J.C. Baltzer AG, Science Publishers 1993

Authors and Affiliations

  • H. -P. Frank
    • 1
  • T. Almeida
    • 1
  • E. Diehl
    • 1
  • K. -H. Ergezinger
    • 1
  • B. Fischer
    • 1
  • B. Ittermann
    • 1
  • F. Mai
    • 1
  • W. Seelinger
    • 1
  • S. Weissenmayer
    • 1
  • G. Welker
    • 1
  • H. Ackermann
    • 1
  • H. -J. Stöckmann
    • 1
  1. 1.Fachbereich Physik der Philipps-UniversitätMarburgGermany

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