Hyperfine Interactions

, Volume 79, Issue 1–4, pp 655–658 | Cite as

Interstitial related defect of12B implanted into n- and p-type silicon

  • H. -P. Frank
  • T. Almeida
  • E. Diehl
  • K. -H. Ergezinger
  • B. Fischer
  • B. Ittermann
  • F. Mai
  • W. Seelinger
  • S. Weissenmayer
  • G. Welker
  • H. Ackermann
  • H. -J. Stöckmann
Section III.3: Semiconductors

Abstract

β-radiation detected nuclear magnetic resonance (β-NMR) measurements of12B occupying sites with noncubic surroundings after implantation into Si have been extended from p-type to moderately doped n-type material. The quadrupole split signals observed in both materials indicate the existence of the same interstitial related boron defect but with lower thermal stability in n-type Si.

Keywords

Silicon Thin Film Boron Nuclear Magnetic Resonance Thermal Stability 

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Copyright information

© J.C. Baltzer AG, Science Publishers 1993

Authors and Affiliations

  • H. -P. Frank
    • 1
  • T. Almeida
    • 1
  • E. Diehl
    • 1
  • K. -H. Ergezinger
    • 1
  • B. Fischer
    • 1
  • B. Ittermann
    • 1
  • F. Mai
    • 1
  • W. Seelinger
    • 1
  • S. Weissenmayer
    • 1
  • G. Welker
    • 1
  • H. Ackermann
    • 1
  • H. -J. Stöckmann
    • 1
  1. 1.Fachbereich Physik der Philipps-UniversitätMarburgGermany

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