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Precise nonselective chemically assisted ion-beam etching of AlGaAs/GaAs Bragg reflectors byin situ laser reflectometry

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Abstract

Precision etch-depth control is realized by a chemically assisted ion-beam etching system incorporated within situ laser reflectometry. By counting the number of interference fringes, etch-depth control better than a quarter-wave thickness is easily obtained. Optimized etching conditions for highly anisotropic etching of bulk GaAs and AlGaAs/GaAs distributed Bragg reflectors are obtained. With the ability to etch-stop just below the active region by thein situ monitoring, InGaAs vertical-cavity surface-emitting lasers with CW threshold current density as low as 380 A cm-2 with output power >11 mW are fabricated. Spatial uniformity is 5% over a 1-cm2 sample, which corresponds to one pair over 20 pairs of quarter-wave stacks of AlGaAs/GaAs distributed Bragg reflectors.

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Authors and Affiliations

  1. Department of Physics, Korea Advanced Institute of Science and Technology, 373-1 Kusong-dong, Yusong-gu, 305-701, Taejon, Korea

    J. Y. Yoo, J. H. Shin & Y. H. Lee

  2. Electronics and Telecommunications Research Institute, Yusong, P.O. Box 106, 305-600, Taejon, Korea

    H. -H. Park & B. -S. Yoo

Authors
  1. J. Y. Yoo
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  2. J. H. Shin
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  3. Y. H. Lee
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  4. H. -H. Park
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  5. B. -S. Yoo
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Yoo, J.Y., Shin, J.H., Lee, Y.H. et al. Precise nonselective chemically assisted ion-beam etching of AlGaAs/GaAs Bragg reflectors byin situ laser reflectometry. Opt Quant Electron 27, 421–425 (1995). https://doi.org/10.1007/BF00563578

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  • DOI: https://doi.org/10.1007/BF00563578

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