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Plastic deformation of filamentary silicon crystals. Relation to formation of dislocations at the surface and evolution of ensemble of these in volume

  • Solid State Physics
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Russian Physics Journal Aims and scope

Abstract

Direct methods, as well as high-sensitivity indirect methods, have shown that in initially dislocation-free filamentary crystals with high Peierls barriers dislocations originate at the surface and become abruptly localized at sites of stress concentration. Formation of the first dislocations does not lead to large-scale multiplication of these and to irreversible plastic deformation; rather, a gradient of the dislocation density appears, reaching 1017 m−3. After penetration of the shear front to about half of the radius of the filamentary crystals, a change in the mechanism of plastic deformation occurs.

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Authors
  1. S. A. Antipov
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  2. I. L. Bataronov
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  3. A. I. Drozhzhin
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  4. A. P. Ermakov
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  5. A. M. Roshchupkin
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  6. M. I. Starovikov
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Additional information

Voronezh Polytechnical Institute. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 60–68, May, 1993.

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Antipov, S.A., Bataronov, I.L., Drozhzhin, A.I. et al. Plastic deformation of filamentary silicon crystals. Relation to formation of dislocations at the surface and evolution of ensemble of these in volume. Russ Phys J 36, 469–475 (1993). https://doi.org/10.1007/BF00560426

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  • DOI: https://doi.org/10.1007/BF00560426

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