Abstract
Breakdown delay times (tdel) for films of managanese-doped zinc sulfide (ZnS:Mn) were measured in the range 10−6−10−1 s. The maximum value was tdel=10−3−10−2 s. The electrical strength (Ebr) was found to increase as the voltage pulse duration was reduced, the more so the thinner the ZnS:Mn film. The temperature dependence of Ebr exhibited a weak reduction in Ebr as the temperature was raised to roughly 80°C and a sharp reduction in Ebr for T>130°C. A maximum in Ebr was observed at T≈130°C which is presumably explained by a structural modification of the ZnS:Mn film. The experimental results obtained are explained in terms of a combined electronic and thermal breakdown mechanism.
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A. A. Zhigal'skii, V. A. Mukhachev, and P. E. Troyan, Izv. Vyssh. Uchebn. Zaved. Fiz., No. 3, 41 (1993).
G. A. Vorob'ev and V. A. Mukhachev, Izv. Vyssh. Uchebn. Zaved. Fiz., No. 11, 36 (1972).
A. A. Vorob'ev and G. A. Vorob'ev, Electrical Breakdown and Damage in Solid Dielectrics [in Russian], Vysshaya Shkola, Moscow (1966).
G. A. Vorob'ev and N. S. Nesmelov, Izv. Vyssh. Uchebn. Zaved. Fiz., No. 1, 90 (1979).
J. W. Allen, J. Lumin.,23, Nos. 1 and 2, 127 (1981).
V. A. Mukhachev and N. S. Mukhacheva, Izv. Vyssh. Uchebn. Zaved. Fiz., No. 11, 155 (1970).
Additional information
State Academy of Control Systems and Radioelectronics, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 3–6, April, 1994.
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Zhigal'skii, A.A., Mukhachev, V.A. & Troyan, P.E. Time and temperature dependent breakdown characteristics of ZnS:Mn films obtained by rf-magnetron sputtering. Russ Phys J 37, 309–311 (1994). https://doi.org/10.1007/BF00560209
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DOI: https://doi.org/10.1007/BF00560209