Semiconducting structures and devices based on gallium arsenide with deep centers

Abstract

We have examined the characteristics of nontraditional gallium arsenide π-v-n type device structures, in which p-n junctions are formed by doping the semiconductor with deep centers. The properties of π-v-n structures are established by processes of charge trapping at deep centers under the effect of an external bias or exposure to a wide spectral range of electromagnetic radiation. The nature of formation of S-type negative differential resistance for a reverse biased π-v-n structure and the mechanism of high speed switching (with a switching time of (0.4–5)×10⁻¹⁰ sec) were analyzed. The results of an investigation of the effects of optical radiation, x-rays, γ-radiation and high energy charged particles on the structures are discussed and the characteristics of new devices constructed using π-v-n structures are presented. These devices include high speed avalanche S-diodes and triodes, wide spectral band photodiodes (λ=0.2–10 µm) and detectors for x-rays, γ-radiation, and relativistic electrons.