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Electrophysical properties of a porous silicon carbide ceramic

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Abstract

The electrical resistance and thermal electromotive force have been measured for porous silicon carbide resistance materials. It has been established that the range of controlled variation in the electrical resistance is 5·10−2 to 1·104 ω · cm, and that the composition of the conducting SiC phase and the concentration of added dielectric constituents have a decisive influence on the electrical characteristics examined.

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Authors
  1. L. A. Shipilova
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  2. A. A. Kas'yanenko
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Additional information

Material Science Problems Institute, Academy of Sciences of the Ukraine, Kiev. Translated from Poroshkovaya Metallurgiya, No. 4(364), pp. 85–89, April, 1993.

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Shipilova, L.A., Kas'yanenko, A.A. Electrophysical properties of a porous silicon carbide ceramic. Powder Metall Met Ceram 32, 361–365 (1993). https://doi.org/10.1007/BF00560024

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  • DOI: https://doi.org/10.1007/BF00560024

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