Abstract
A study has been made of the electrophysical characteristics of nuclear-transmutation-doped GaAs (NTDG) and GaAs doped with metallurgical impurities Sn, Te, Ge, and In, after irradiation by H+ ions at fluxes of up to 1.5·1016 cm−2. It is shown that the changes in the GaAs produced by irradiation do not depend on the method used to dope the material and can be described on the basis of the known spectrum of E and H traps in GaAs. Crystals of GaAs annealed after irradiation display deep (P1–P3) traps, which are responsible for the high-temperature proton “insulation” GaAs.
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V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 61–65, October, 1992.
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Brudnyi, V.N., Kolin, N.G. & Potapov, A.I. Electrophysical properties and annealing of defects in nuclear transmutation-doped GaAs irradiated by H+ ions. Russ Phys J 35, 943–946 (1992). https://doi.org/10.1007/BF00559890
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DOI: https://doi.org/10.1007/BF00559890