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Solid solutions of CdSn(As1−xPx)2 and their properties

  • Physics Of Seiconductors And Insulators
  • Published:
Russian Physics Journal Aims and scope

Abstract

We have grown single crystals of CdSn(As1−xPx)2 solid solutions over the entire range of x. On the basis of the temperature dependence of the Hall coefficient and the Hall mobility, we conclude that there is a mixed carrier scattering mechanism in all of these solid solutions, over the entire temperature range from 100 to 500 K, involving both impurity ions and thermal lattice phonons. IR absorption and photoconductivity spectra show that the band gap in the solid solutions varies linearly with composition. We conclude that crystals in the range 0.5<x<0.95 may be used to fabricate IR photodetectors and emission sources operating from 1.1 to 1.7 µm.

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Authors
  1. V. I. Danilov
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  2. B. N. Zvonkov
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Additional information

State Pedagogical Institute, Nizhegorod. Physicotechnical Research Institute. Nizhegorod. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 40–43, October, 1992.

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Danilov, V.I., Zvonkov, B.N. Solid solutions of CdSn(As1−xPx)2 and their properties. Russ Phys J 35, 927–930 (1992). https://doi.org/10.1007/BF00559885

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  • DOI: https://doi.org/10.1007/BF00559885

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