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Investigation of using a pulsed voltage to form an Al-SiO-Ni thin-film system

  • Physics of Semiconductors And Dielectrics
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Russian Physics Journal Aims and scope

Abstract

A study was made of the laws governing the process involved in forming an Al-SiO-Ni metal—insulator—metal (MIM) system using a pulsed voltage. The dependences of the forming rate on the voltage pulse parameters and the temperature were determined. It was shown that there is a minimum temperature-dependent pulse duration below which forming is not observed. The application of pulses having a duration of less than the critical value to an MIM system causes the leakage current to decrease with time. Forming occurs considerably more quickly when the temperature is raised, the activation energies being 0.17 and 0.21 eV respectively for the temperature ranges 293–343 and 343–403 K. The results obtained are explained in terms of a forming model based on local regions in the insulator being dissociated by hot electrons.

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Authors
  1. S. S. Kramor
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  2. R. B. Lubsanov
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Additional information

Institute of Automated Control Systems and Radio Electronics, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 18–23, December, 1993.

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Kramor, S.S., Lubsanov, R.B. Investigation of using a pulsed voltage to form an Al-SiO-Ni thin-film system. Russ Phys J 36, 1112–1115 (1993). https://doi.org/10.1007/BF00559684

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  • DOI: https://doi.org/10.1007/BF00559684

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