Russian Physics Journal

, Volume 38, Issue 1, pp 9–14 | Cite as

Formation of elementary radiation defects in halide crystals with different types of crystal lattice

  • L. A. Lisitsyna
  • V. M. Lisitsyn
  • E. P. Chinkov
Semiconductor And Dielectric Physics

Abstract

Pulsed spectrometry with time resolution has been used to study processes for creation of self-localized excitons and F centers under the action of a pulsed electron flux of nanosecond duration at temperatures in the region from 80 to 600 K in CaF2 and LiF crystals. It is shown that an alternative to creation of self-localized excitons in the triplet state with increased crystal temperature during irradiation is formation of an F-H pair. A comparative analysis of the effectiveness of the processes for creation of elementary defects in the crystals studied is given.

Keywords

Radiation Comparative Analysis Crystal Lattice Halide Time Resolution 

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Copyright information

© Plenum Publishing Corporation 1995

Authors and Affiliations

  • L. A. Lisitsyna
  • V. M. Lisitsyn
  • E. P. Chinkov

There are no affiliations available

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