Abstract
Experimental data is reported on the temperature dependence of the write and erase parameters of the informational logical 1 or logical 0 for energy-independent memory elements based on metal-lead oxide-silicon (or gallium arsenide) as well as the results of studying the information storage time at elevated temperatures. The nature of the physical processes that allow writing and erasing of a logical 1 (or logical 0) in the investigated memory elements upon the application of an electrical signal is discussed.
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Additional information
V. D. Kuznetsov Siberian Physicotechnical Institute, State University, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 116–121, July, 1992.
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Gaman, V.I., Kalygina, V.M. & Nikolaev, A.I. Energy-independent memory elements based on metal-PbO-semiconductor structures. Russ Phys J 35, 681–685 (1992). https://doi.org/10.1007/BF00559243
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DOI: https://doi.org/10.1007/BF00559243