Abstract
We study charge accumulation processes in silicon MIS structures with a dysprosium oxide dielectric layer, when the structure is exposed to UV radiation. The dependence of the trapped charge on the exposure time, the applied voltage, and the charge passing through the MIS structure is determined. It is shown that there are deep-seated capture centers for electrons and holes in the dysprosium oxide and these effects can be exploited in devices capable of optically recording and erasing information.
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Additional information
Samarkand State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 99–105, July, 1994.
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Rozhkov, V.A. Charge accumulation in silicon mis structures with dysprosium oxide dielectrics exposed to UV radiation. Russ Phys J 37, 682–686 (1994). https://doi.org/10.1007/BF00559204
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DOI: https://doi.org/10.1007/BF00559204