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Mobility of charge carriers in disordered dielectrics

  • Physics Of Semiconductors And Dielectrics
  • Published:
Russian Physics Journal Aims and scope

Abstract

We compare experimental data on the mobility of holes (the majority charge carriers) in polyepoxy-propylcarbazole, measured using the time-of-flight technique (drift mobility) and the nonsteady-state radiation-induced electrical conductivity method (effective mobility). We show that these two quantities are quite different in the dispersive transport regime; and while the second quantity is a characteristic of the material, the first quantity depends in a complicated fashion on the ratio of the electric field strength to the sample thickness. The “untreated” data on drift mobility measurements using the time-of-flight technique do not have direct physical meaning and cannot be compared with the conclusions of modern microscopic theories of the mobility of charge carriers in disordered matrices.

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High-Voltage Scientific-Research Institute at Tomsk Polytechnical University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 82–88, July, 1994.

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Tiotnev, A.P., Boev, S.G. & Sadovnichii, D.N. Mobility of charge carriers in disordered dielectrics. Russ Phys J 37, 667–672 (1994). https://doi.org/10.1007/BF00559201

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  • DOI: https://doi.org/10.1007/BF00559201

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