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Electrical properties of metal-vanadium-borate glass-gallium arsenide structures

  • Physics Of Semiconductors And Dielectrics
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Russian Physics Journal Aims and scope

Abstract

The results of a study of the electrical properties of MIS structures based on n-type GaAs are presented. The static current-voltage characteristics and the dependences of the capacitance and active conductance on the voltage on the MIS structure in the frequency range of the test signal from 22 to 105 Hz at room temperature and in the temperature range 295–367 K at a frequency of 103 Hz are analyzed in detail. A method is proposed for determining the total density of surface states Nts, which determine the position of the Fermi energy on the semiconductor surface for MIS structures with large Nts.

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Authors
  1. V. I. Gaman
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  2. N. N. Ivanova
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  3. V. M. Kalygina
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  4. E. B. Sudakova
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Additional information

V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University. Translated from Izvestiya Vysshykh Uchebnykh Zavedenii, Fizika, No. 11, pp. 99–108, November, 1992.

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Gaman, V.I., Ivanova, N.N., Kalygina, V.M. et al. Electrical properties of metal-vanadium-borate glass-gallium arsenide structures. Russ Phys J 35, 1078–1086 (1992). https://doi.org/10.1007/BF00559108

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  • DOI: https://doi.org/10.1007/BF00559108

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