Abstract
We examine the mechanisms for Auger recombination in narrow-gap semiconductors of the Hg1-xCdxTe type, connected with collision between two electrons in the Ec band followed by transition of one of them to the Ev1 band and collision between two holes in the Ev1 band followed by transition of one of them to the Ev2 band. In analyzing the contributions from different recombination mechanisms over broad concentration and temperature range, we used the models of P. E. Petersen and B. L. Gel'mont, taking into account the specific characteristics of the band structure of Hg1-xCdxTe crystals. We determined the temperature and concentration ranges for n- and p-type semiconductors in which different recombination mechanisms are realized, including a radiative mechanism. We compare the experimental data on charge carrier lifetime with the calculation results using different recombination models in the crystals under study.
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V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 99–104, February, 1994.
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Voitsekhovskii, A.V. Lifetime of charge carriers in Hg1-xCdxTe (x=0.20) crystals. Russ Phys J 37, 195–200 (1994). https://doi.org/10.1007/BF00559067
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DOI: https://doi.org/10.1007/BF00559067