Russian Physics Journal

, Volume 38, Issue 10, pp 1007–1022 | Cite as

Electron—Positron annihilation in the narrow-band semiconductor Hg1−xCdxTe

  • A. V. Voitsekhovskii
  • A. G. Korotaev
  • A. P. Kokhanenko
Physics Of Semiconductors And Dielectrics
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Abstract

Positron annihilation processes in mercury—cadmium—telluride semiconductor compounds have been studied. Calculations of the positron thermalization time, the bulk annihilation rate, and the positron capture rate for the simplest crystal lattice structural defects have been carried out. The annihilation properties of materials containing growth defects and defects induced by high-energy particles have been determined experimentally. The profiles of vacancy-type defects formed during ion implantation were determined using slow positrons. The positron annihilation data are compared with the results of electrophysical measurements.

Keywords

Positron Annihilation Thermalization Time Annihilation Rate Annihilation Process Slow Positron 

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Copyright information

© Plenum Publishing Corporation 1996

Authors and Affiliations

  • A. V. Voitsekhovskii
  • A. G. Korotaev
  • A. P. Kokhanenko

There are no affiliations available

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