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Kink instability of the semiconductor plasma in silicon parallelepipeds

  • Physics Of Semiconductors And Dielectrics
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Russian Physics Journal Aims and scope

Abstract

Experimental results on the onset of the kink instability of the semiconductor plasma in silicon p+-p-n+ structures are analyzed. The structures were parallelepipeds. The experiments were carried out over the temperature range from 77 to 300 K. The shape of the current-voltage characteristics and that of the threshold curves of the test samples are discussed. The frequency and amplitude of the alternating current which arises as a result of the kink instability are described as a function of the electric field and the magnetic induction at levels substantially above the excitation threshold.

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Authors
  1. V. I. Gaman
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  2. P. N. Drobot
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  3. G. F. Karlova
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Additional information

V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University. Scientific-Research Institute of Semiconductor Devices. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 103–110, May, 1992.

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Gaman, V.I., Drobot, P.N. & Karlova, G.F. Kink instability of the semiconductor plasma in silicon parallelepipeds. Russ Phys J 35, 481–486 (1992). https://doi.org/10.1007/BF00558864

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  • DOI: https://doi.org/10.1007/BF00558864

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