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Journal of Materials Science

, Volume 5, Issue 11, pp 988–991 | Cite as

Heteroepitaxial overgrowth of ZnS on GaS single crystals

  • M. Hársy
  • E. Lendvay
Papers

Abstract

The heteroepitaxial overgrowth of ZnS on the basal plane of GaS single crystals was observed during the simultaneous synthesis of GaS and ZnS. The morphology and orientation of ZnS nuclei were investigated in the initial stage of overgrowth. It was found that the ZnS nuclei might be either regular forms such as triangles and hexagons, or dendritic formations with definite orientation relations. The system investigated proves the possibility of heteroepitaxy between compounds with different lattice parameters if these fulfil some special conditions.

Keywords

Polymer Orientation Relation Basal Plane Regular Form Dendritic Formation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman and Hall Ltd. 1970

Authors and Affiliations

  • M. Hársy
    • 1
  • E. Lendvay
    • 1
  1. 1.Research Institute for Technical Physics of the Hungarian Academy of SciencesUjpest, BudapestHungary

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