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Finite-element thermal model for buried-heterostructure diode lasers

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Abstract

First results of our new finite-element modelling of thermal properties of GaAs/(AlGa)As buried-heterostructure (BH) lasers are reported. The calculus procedure is very efficient, so we have used a standard IBM PC/XT microcomputer. For the stripe active-region width of 1 μm, the thermal resistance of the laser was determined to be about 70 KW-1, whereas its electrical resistance was about 6 ohms. To the best of our knowledge, isothermal lines within BH lasers have been obtained for the first time. The isothermal configuration enables us to analyse heat-spreading phenomena in BH lasers, which makes possible thermal optimization of the laser construction.

As the first application of the model, the relative influence of the oxide layer thickness on the laser thermal resistance was examined. Because of relatively large lateral dimensions of the laser crystal as compared to the active region, this influence is often neglected, whereas our detailed calculations reveal its importance. An increase in this thickness from 0.1 μm to 0.5 μm is followed by over 15% increase in the laser thermal resistance.

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Authors and Affiliations

  1. Institute of Physics, Technical University of Lodz, ul. Wolczanska 219, 93-005, Lodz, Poland

    R. P. Sarzala

  2. Center for High Technology Materials, University of New Mexico, 87131-6081, Albuquerque, NM, USA

    W. Nakwaski

Authors
  1. R. P. Sarzala
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  2. W. Nakwaski
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Sarzala, R.P., Nakwaski, W. Finite-element thermal model for buried-heterostructure diode lasers. Opt Quant Electron 26, 87–95 (1994). https://doi.org/10.1007/BF00558144

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  • DOI: https://doi.org/10.1007/BF00558144

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