Abstract
Single-crystal expitaxial layers of CdS on (111) Ge substrates, 8 to 60 μm thick, have been grown from the vapour phase in a closed-tube system. Hydrogen was used as a transport agent. The experimental conditions (source and deposit temperatures, and initial pressure of hydrogen) have been defined where the growth of single-crystal expitaxial layers is feasible. Observations on the morphology of the layers are reported, which suggest that at least two different growth mechanisms should be active in the system. Finally, the composition of the gaseous phase was calculated by assuming a non-reactivity of the Ge substrate with the vapour phase.
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Paorici, C., Pelosi, C., Bolzoni, G. et al. Epitaxial growth of cadmium sulphide on (111) germanium substrates. J Mater Sci 10, 2117–2123 (1975). https://doi.org/10.1007/BF00557490
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DOI: https://doi.org/10.1007/BF00557490