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Dielectric breakdown processes in anodic Ta2O5 and related oxides

A review

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Abstract

The dielectric breakdown properties during the anodic oxidation of valve metals (Ta, Nb, Al, etc.) are reviewed. First, the theories developed for insulating films flanked by metal electrodes are analysed. The major emphasis is placed on the avalanche models since they give the best account of the experimental facts observed with electrolytic contacts, i.e. during the anodization. Some hints to increase the breakdown potential are finally given.

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Authors and Affiliations

  1. Instituto Ciencia Materiales, CSIC, and Departamento Física Aplicada, C12., Universidad Autónoma, Cantoblanco, 28049, Madrid, Spain

    J. M. Albella, I. Montero & J. M. Martínez-Duart

  2. Minsk Radioengineering Institute, P. Brovki St. 6., 22069, Minsk, USSR

    V. Parkhutik

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  1. J. M. Albella
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  2. I. Montero
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  3. J. M. Martínez-Duart
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  4. V. Parkhutik
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On a sabbatical stay at the Instituto de Ciencia de Materiales, CSIC, Madrid, Spain.

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Albella, J.M., Montero, I., Martínez-Duart, J.M. et al. Dielectric breakdown processes in anodic Ta2O5 and related oxides. J Mater Sci 26, 3422–3432 (1991). https://doi.org/10.1007/BF00557127

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