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Journal of Materials Science

, Volume 27, Issue 19, pp 5169–5173 | Cite as

Studies on the seebeck effect in semiconducting ZnO thin films

  • M. G. Ambia
  • M. N. Islam
  • M. Obaidul Hakim
Papers

Abstract

For ZnO thin films prepared by a pyrolytic technique, the thermoelectric power has been measured from room temperature up to 200 °C with reference to pure lead. The thickness and temperature dependence of its related parameters have been studied. The Fermi levels were determined using a nondegenerate semiconducting model. The carrier scattering index, activation energy and temperature coefficient of activation energy, have all been obtained at different ranges of thickness and temperature. All the samples were polycrystalline in structure and optically transparent.

Keywords

Polymer Thin Film Activation Energy Fermi Level Temperature Coefficient 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1992

Authors and Affiliations

  • M. G. Ambia
    • 1
  • M. N. Islam
    • 1
  • M. Obaidul Hakim
    • 1
    • 2
  1. 1.Department of Applied Physics and ElectronicsUniversity of RajshahiRajshahiBangladesh
  2. 2.Department of PhysicsUniversity of RajshahiRajshahiBangladesh

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