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High temperature creep in polycrystalline AIN-SiC ceramics

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Abstract

Polycrystalline dense ceramic specimens containing 75 mol % AIN-25 mol % SiC and 60 mol % AIN-40 mol % SiC were subjected to creep deformation in bending at elevated temperatures. Over the range of temperatures and stresses investigated, the creep rate was found to vary linearly with stress indicative of diffusional creep. Creep was found to be thermally activated with activation energy in the range from 175 kcal mol−1 to 219 kcal mol−1. Electron microscopic observation indicated that crack like cavities formed near the tensile surfaces during creep.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, University of Utah, 84112, Salt Lake City, Utah, USA

    Z. C. Jou, S. Y. Kuo & A. V. Virkar

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  1. Z. C. Jou
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  2. S. Y. Kuo
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  3. A. V. Virkar
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Jou, Z.C., Kuo, S.Y. & Virkar, A.V. High temperature creep in polycrystalline AIN-SiC ceramics. J Mater Sci 21, 3015–3018 (1986). https://doi.org/10.1007/BF00553330

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  • DOI: https://doi.org/10.1007/BF00553330

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