Abstract
The sinterability of a Si powder, which undergoes limited densification at 1350° C, was remarkably influenced by small additions of B and/or Sn. Boron was shown to be a sintering aid and permitted the development of a fine-grain/fine-pore microstructure. Tin was shown to be sintering retardant and resulted in the formation of a highly-coarsened microstructure. The data presented supports the concept that B and Sn most likely affect the grain-boundary diffusion coefficient of Si.
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References
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Greskovich, C. The effect of small amounts of B and Sn on the sintering of silicon. J Mater Sci 16, 613–619 (1981). https://doi.org/10.1007/BF00552198
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DOI: https://doi.org/10.1007/BF00552198