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Journal of Materials Science

, Volume 16, Issue 3, pp 613–619 | Cite as

The effect of small amounts of B and Sn on the sintering of silicon

  • C. Greskovich
Papers

Abstract

The sinterability of a Si powder, which undergoes limited densification at 1350° C, was remarkably influenced by small additions of B and/or Sn. Boron was shown to be a sintering aid and permitted the development of a fine-grain/fine-pore microstructure. Tin was shown to be sintering retardant and resulted in the formation of a highly-coarsened microstructure. The data presented supports the concept that B and Sn most likely affect the grain-boundary diffusion coefficient of Si.

Keywords

Polymer Silicon Microstructure Boron Diffusion Coefficient 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman and Hall Ltd 1981

Authors and Affiliations

  • C. Greskovich
    • 1
  1. 1.Ceramics Branch, Physical Chemistry Laboratory, Corporate Research and DevelopmentGeneral Electric CompanySchenectadyUSA

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