Journal of Materials Science

, Volume 16, Issue 3, pp 613–619 | Cite as

The effect of small amounts of B and Sn on the sintering of silicon

  • C. Greskovich


The sinterability of a Si powder, which undergoes limited densification at 1350° C, was remarkably influenced by small additions of B and/or Sn. Boron was shown to be a sintering aid and permitted the development of a fine-grain/fine-pore microstructure. Tin was shown to be sintering retardant and resulted in the formation of a highly-coarsened microstructure. The data presented supports the concept that B and Sn most likely affect the grain-boundary diffusion coefficient of Si.


Polymer Silicon Microstructure Boron Diffusion Coefficient 
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Copyright information

© Chapman and Hall Ltd 1981

Authors and Affiliations

  • C. Greskovich
    • 1
  1. 1.Ceramics Branch, Physical Chemistry Laboratory, Corporate Research and DevelopmentGeneral Electric CompanySchenectadyUSA

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