Observation of residual stress and defects in silicon induced by scribing
Residual stresses induced by three scribing methods, diamond point scriber, laser scriber and diamond blade saw, are studied quantitatively by infra-red photoelasticity. It is clear that diamond blade saw scribing is most desirable, for residual stress induced by it is several times smaller than the stress caused by the other methods. The stress gradient differs between the laser scribed sample and the others, probably because of the difference in stress generation mechanism. Removing the damaged layer by etching reduces residual stress. The three scribing methods are also studied by the observation of defects after annealing and the results are compared with those determined by photoelastic measurement.
KeywordsPolymer Silicon Residual Stress Generation Mechanism Stress Generation
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