Abstract
This paper reports the analysis of lattice defects induced in silicon by phosphorus predeposition carried out at 920, 1000 and 1100° C through a polycrystalline silicon layer. The corresponding results obtained on bare wafers are also represented for comparison.
From transmission electron microscopy it was found that the precipitation of phosphorus, when it occurs, is confined within the polysilicon film, keeping the substrate free from this type of defect, even for very long predeposition times. In addition, X-ray topography showed that extrinsic stacking faults and dislocations were absent, although these are commonly observed when the doping process is performed under the same conditions on a bare single crystal.
This behaviour suggests that the polysilicon layer acts as a sink for the excess interstitials induced by the in-going phosphorus atoms. The resulting improvement of lattice perfection should allow fabrication of devices with better electrical performances.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J. C. C. Tsai, Proc. IEEE 57 (1969) 1499.
M. Yoshida, E. Arai, H. Nakamura and Y. Terunuma, J. Appl. Phys. 45 (1974) 1498.
G. Masetti, D. Nobili and S. Solmi, “Semiconductor Silicon 1977”, edited by H. R. Huff and E. Sirtl (The Electrochemical Society, Princeton, NJ, 1977) p. 648.
A. Armigliato, M. Servidori, S. Solmi and I. Vecchi, J. Appl. Phys. 48 (1977) 1806.
C. L. Clalys, G. J. Declerck and R. J. Van Overstraeten, “Semiconductor Characterization Techniques”, edited by P. A. Barnes and G. A. Rozgonyi (The Electrochemical Society, Princeton, NJ, 1977) p. 366.
P. Negrini, D. Nobili and S. Solmi, J. Electrochem. Soc., 122 (1975) 1254.
A. Armigliato, D. Nobili, M. Servidori and S. Solmi, J. Appl. Phys. 47 (1976) 5489.
C. L. Jones and A. F. W. Welloughby, J. Electrochem. Soc. 122 (1975) 1531.
C. Donolato, P. G. Merli and I. Vecchi, J. Electrochem. Soc. 124 (1977) 473.
J. Lindmayer and J. F. Allison, Conference Record of the 9th IEEE Photovoltaic Specialists Conference, Silver Spring (1972) 83.
H. Murmann, A. Glasl and K. Lindemann, Abstracts of the 6th European Solid State Devices Research Conference (ESSDERC) (1976) p. 25; see also Electronics 47 (1974) 23.
M. Finetti, D. Nobili, S. Solmi and Q. Zini, to be published.
M. Servidori and A. Armigliato, J. Mater. Sci. 10 (1975) 306.
C. Ghezzi and M. Servidori, ibid. 9 (1974) 1797.
M. Finetti, G. Masetti, P. Negrini and S. Solmi, to be published.
M. Finetti, P. Ostoja, S. Solmi and G. Soncini, “Solid State Electronics”, in press.
M. Finetti, P. Ostoja, S. Solmi and G. Soncini, Proceedings of the IEEE Photovoltaic Special Conference (1978).
Author information
Authors and Affiliations
Additional information
Work supported by C.N.R. Progetto Finalizzato Energetica.
Rights and permissions
About this article
Cite this article
Armigliato, A., Servidori, M., Solmi, S. et al. Role of a polysilicon layer in the reduction of lattice defects associated with phosphorus predeposition in silicon. J Mater Sci 15, 1124–1130 (1980). https://doi.org/10.1007/BF00551800
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF00551800