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Journal of Materials Science

, Volume 3, Issue 1, pp 89–98 | Cite as

Anomalous diffusion effects in silicon (a review)

  • A. F. W. Willoughby
Review

Abstract

This paper is concerned with anomalous diffusion effects in silicon, and particularly with the emitter-dip (or push-out) effect, which occurs in diffused transistors. Several possible mechanisms may be involved in anomalous diffusion and each is discussed, together with relevant experimental and theoretical work. Literature directly on the emitter-dip effect is next reviewed, and finally the author suggests fields of research which may clarify the mechanism or mechanisms involved.

Keywords

Polymer Silicon Theoretical Work Diffusion Effect Anomalous Diffusion 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman and Hall 1968

Authors and Affiliations

  • A. F. W. Willoughby
    • 1
  1. 1.Engineering Materials LaboratoriesThe UniversitySouthamptonUK

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