Abstract
Dislocations in a silicon specimen containing a p-n junction have been imaged with a scanning optical microscope (SOM) and a scanning electron microscope (SEM) using the induced carrier mode. Examination of the same dislocations by the two methods has shown that virtually identical images are obtained and the spatial resolution is 1μm.
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Wilson, T., Osicki, W.R., Gannaway, J.N. et al. Comparison of dislocation images obtained using the scanning optical microscope and scanning electron microscope. J Mater Sci 14, 961–965 (1979). https://doi.org/10.1007/BF00550728
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DOI: https://doi.org/10.1007/BF00550728