Abstract
The etching of mechanically polished gadolinium-gallium garnet substrates by phosphoric acid, sulphuric acid and sulphuric-oxalic acid mixture was investigated in order to find an etchant which would remove the damaged surface layer and provide a substrate surface suitable for liquid phase epitaxial growth of magnetic garnets. Optimum surface properties were obtained when substrates were etched for 10 sec in phosphoric acid which had been maintained for 1 to 2 h at temperatures of 350 or 400°C. The disadvantage of this etchant is that it increases the surface roughness of the substrate. Surface smoothness was retained when substrates were etched in sulphuric acid; however, this acid revealed residual scratch marks introduced into the platelet during mechanical polishing. The sulphuric-oxalic acid mixture and phosphoric acid at 160° C revealed defects due to coring, faceting and scratch marks.
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Szaplonczay, A.M., Quon, H.H.D. Chemical etching of gadolinium-gallium garnet substrates. J Mater Sci 7, 1280–1284 (1972). https://doi.org/10.1007/BF00550693
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DOI: https://doi.org/10.1007/BF00550693