Journal of Materials Science

, Volume 7, Issue 10, pp 1154–1160 | Cite as

Studies on the formation of V3Ga and V3Si superconducting compounds by a new diffusion process

  • K. Tachikawa
  • Y. Yoshida
  • L. Rinderer


In the present work, diffusion between vanadium and Cu-20 at.% Ga alloy and that between vanadium and Cu-20 at.% Si alloy were studied. An intermetallic compound, V3Ga, is formed easily by the selective diffusion of gallium from the Cu-Ga alloy to the vanadium. V5Si3 and V3Si are formed also by the selective diffusion of silicon from the Cu-Si alloy to the vanadium. Copper scarcely dissolves either in V3Ga, V5Si3 or V3Si. Copper is not effective for enhancing the formation of V3Si unlike the case of V3Ga. A large super-conducting critical current density, Jc, is obtained in the V3Ga formed at temperatures below 700° C while a much smaller Jc is obtained in the V3Si formed at 800° C. Changes in Jc due to the heat-treatment can be interpreted by the grain growth of the compounds.


Polymer Copper Silicon Vanadium Gallium 
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Copyright information

© Chapman and Hall Ltd 1972

Authors and Affiliations

  • K. Tachikawa
    • 1
  • Y. Yoshida
    • 1
  • L. Rinderer
    • 2
  1. 1.National Research Institute for MetalsTokyoJapan
  2. 2.University of LausanneLausanneSwitzerland

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