Glass-ceramics for use in silicon semiconductor applications
Electronic engineers are interested in glass-ceramics for coating and bonding silicon semiconductor material for the fabrication of integrated circuit devices. The glass-ceramics must be able to withstand temperatures of 1100 to 1200° C and should be reasonably well matched in expansion to silicon. Glass-ceramics of the ZnO-Al2O3-SiO2 type, with the addition of various oxides have been examined. It has been shown that additions of CaO, BaO or B2O3 give materials which are matched in linear thermal expansion characteristics to silicon, and these materials can be applied to pre-oxidised silicon at temperatures in the region of 1200° C to give smooth, adherent coatings on the silicon, the coatings being refractory at temperatures in excess of 1100° C. The glass-ceramics can also be used to bond together silicon pieces using similar firing schedules to those used to provide the coatings on silicon. By suitable choice of the firing conditions and control of the thickness of the silicon dioxide interlayer, the attack by the glass-ceramic on the underlying silicon can be reduced to a negligible amount. The glass-ceramics of the types examined have been shown to have high volume resistivities (greater than 108 ohm cm at 500° C), and can resist the environmental conditions likely to be encountered in diffusion processes.
KeywordsSilicon Thermal Expansion B2O3 Negligible Amount Linear Thermal Expansion
Unable to display preview. Download preview PDF.
- 1.“Handbook of Thermophysical Properties of Solid Materials”, Vol. I, edited by A. Goldsmith, T. E. Waterman, and H. J. Hirschhorn (MacMillan, New York, 1961).Google Scholar
- 2.L. Maissel, J. Appl. Phys. 31 (1960) 211.Google Scholar
- 3.F. W. Ainger, J. Materials Sci. 1 (1966) 11.Google Scholar
- 4.P. W. Mcmillian, G. Partridge, and F. R. Ward, Microelectronics and Reliability. 8 (1969).Google Scholar