Abstract
Circuit arrangements for the anodisation of tantalum foil in an oxygen gas plasma are discussed. It is shown that the process can be explained in electrochemical terms. Using constant current anodisation, the thickness of oxide formed in the voltage range 0 to 20 V is in the region of 24 to 28 Å/V. The results indicate that the gaseous process, which has both a low current efficiency and a poor throwing power, is most suitably applied to smooth, vacuum-deposited materials.
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Jackson, N.F. The gaseous anodisation of tantalum. J Mater Sci 2, 12–17 (1967). https://doi.org/10.1007/BF00550047
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DOI: https://doi.org/10.1007/BF00550047