Abstract
Two techniques are described by which single crystals of sapphire may be grown. One is a development of the vertical-pulling technique for the production of scatter-free, lowdislocation-density material, whilst the other is an extension of a floating-zone, recrystallisation technique previously used for calcium tungstate. The origin and control of defects in crystals grown by these techniques are discussed.
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Cockayne, B., Chesswas, M. & Gasson, D.B. Single-crystal growth of sapphire. J Mater Sci 2, 7–11 (1967). https://doi.org/10.1007/BF00550046
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DOI: https://doi.org/10.1007/BF00550046