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Growth and properties of CdxHg1−xTe crystals

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Abstract

It has been found that there are two main factors complicating the preparation of CdxHg1−xTe. The marked difference between the liquidus and solidus curves of the CdTe-HgTe pseudo-binary system gives the expected problems of segregation of CdTe with respect to HgTe during growth but there are also problems due to the segregation of any excess Te in the melt. A 2% excess of Te can give rise to pronounced constitutional supercooling effects. To avoid this, careful control of melt stoichiometry is required. This is made difficult by the high vapour pressure of mercury over the melt, the value of which is not known with great accuracy.

The conditions of melt stoichiometry required for crystal growth do not necessarily give material of the required type and resistivity and this must be adjusted after growth by annealing at a controlled mercury pressure at a fixed temperature.

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References

  1. W. D. Lawson, S. Nielson, E. H. Putley, and A. S. Young, J. Phys. Chem. Solids 9 (1959) 325.

    Google Scholar 

  2. T. C. Harman, “Physics and Chemistry of II–VI Compounds”, edited by M. Aven and J. S. Prener (North Holland Publishing Co, Amsterdam, 1967) p. 767.

    Google Scholar 

  3. J. Blair and R. Newnham, “Metallurgy of Elemental and Compound Semiconductors” (Interscience, New York, 1961) p. 393.

    Google Scholar 

  4. W. A. Tiller, “The Art and Science of Growing Crystals” (Wiley, New York, 1963) p. 294.

    Google Scholar 

  5. H. Rodot, Thesis, Paris, 1964.

  6. T. C. Harman, B. Paris, S. E. Miller, and H. L. Goering, J. Phys. Chem. Solids 2 (1957) 181.

    Google Scholar 

  7. R. T. Delves, Brit. J. Appl. Phys. 16 (1965) 343.

    Google Scholar 

  8. J. A. Burton and W. P. Slichter, “Transistor Technology”, edited by H. E. Bridgers, J. H. Scaff and J. N. Shive (D. Van Nostrand Company Inc, New York, 1958) p. 71.

    Google Scholar 

  9. M. Rodot, H. Rodot, and C. Verie, “Proc. of 7th International Conference on the Physics of Semiconductors” (Paris, 1964) p. 1236.

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Authors and Affiliations

  1. Mullard Ltd, Southampton, Hants, UK

    B. E. Bartlett, J. Deans & P. C. Ellen

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  1. B. E. Bartlett
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  2. J. Deans
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  3. P. C. Ellen
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Bartlett, B.E., Deans, J. & Ellen, P.C. Growth and properties of CdxHg1−xTe crystals. J Mater Sci 4, 266–270 (1969). https://doi.org/10.1007/BF00549927

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  • DOI: https://doi.org/10.1007/BF00549927

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