Abstract
The effect of process variables in controlled co-deposition of copper-nickel films employing one oscillated electron beam and two pure sources was systematically studied. Structural features were investigated by optical microscopy and X-ray and electron beam analysis. Correlations between structure and growth conditions were sought.
The effect of substrate temperature was found to be similar to that observed in single element deposition: Grain size increased with temperature and preferred orientation appeared above 300° C. At high frequencies of electron beam oscillation a homogeneous binary vapour appears to be formed and deposited similarly to a single component vapour. Films co-deposited at low frequencies exhibited topographies suggesting periodic rather than simultaneous deposition of two vapours.
Controlled and reproducible co-deposition was confined to experimental limits due to the use of equal area sources. It is believed that the difference in thermal properties of the source materials leading to the above limitation, can be compensated for by evaporation from sources of different surface areas.
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Work performed at the Massachusetts Institute of Technology where the authors held positions of, respectively, Research Assistant and Professor of Metallurgy.
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Oron, M., Adams, C.M. Controlled electron beam co-deposition of copper-nickel films. J Mater Sci 4, 252–258 (1969). https://doi.org/10.1007/BF00549925
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DOI: https://doi.org/10.1007/BF00549925