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Journal of Materials Science

, Volume 26, Issue 18, pp 4924–4930 | Cite as

Crystallization kinetics in glassy Ge20Se80−xIn x alloys

  • P. Agarwal
  • S. Goel
  • S. K. Tripathi
  • A. Kumar
Papers

Abstract

Crystallization kinetics is studied in glassy Ge20Se80−xInx (0 ≤ x ≤ 20) using isothermal annealing at temperatures between the glass transition and melting. D.c. conductivity is taken as a parameter to estimate the extent of crystallization (α). The activation energy of crystallization (ΔE) and the order parameter (n) are calculated by fitting the values of α in the Avrami equations of isothermal crystallization. The results indicate that ΔE is highly composition-dependent, which is explained in terms of the stable phases in the Ge-Se-In system.

Keywords

Polymer Crystallization Activation Energy Glass Transition Stable Phasis 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1991

Authors and Affiliations

  • P. Agarwal
    • 1
  • S. Goel
    • 1
  • S. K. Tripathi
    • 1
  • A. Kumar
    • 1
  1. 1.Department of PhysicsHarcourt Butler Technological InstituteKanpurIndia

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