Abstract
Severe damage has been found to occur in silicon when the conventional alloying technique is used to form contacts to very thick samples of large area. The usual alloying procedure has been modified by the use of separate silicon spacers to apply pressure to the alloying foil. This modified technique combined with the use of an improved alloying jig which provides positive control of the temperature gradient, has enabled satisfactory contacts to be formed on samples up to 22 mm diameter and 4 mm thick.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
D. E. Mason and D. F. Taylor, “Progress in Semiconductors” Vol 3 (Heywood, London, 1958) p. 85.
F. M. Roberts and E. L. G. Wilkinson, J. Mater. Sci. 3 (1968) 110.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Astridge, R.A., Holt, J. Alloyed contacts to thick, large area semiconductor devices. J Mater Sci 5, 640–644 (1970). https://doi.org/10.1007/BF00549747
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF00549747