Journal of Materials Science

, Volume 3, Issue 5, pp 544–552 | Cite as

The mechanism of reactive sputtering

  • E. Hollands
  • D. S. Campbell
Papers

Abstract

The reactive sputtering of tantalum in mixed argon/oxygen atmospheres at a total pressure of 3.0×10−4 torr has been investigated by means of measurements on deposition and growth rates, density, electrical properties and electron diffraction. The main controlling factor on all of the parameters was found to be the partial pressure of oxygen.

The deposition rate was determined by the partial pressure of oxygen and assumed one of two values — either that associated with a clean tantalum target or that characteristic of an oxidised target. In the former region the oxygen content of the sputtered film was mainly dependent on the partial pressure of oxygen in the sputtering atmosphere and could range from zero to 100%. In the latter region, the films were always oxidised, but were deposited at a rate which was a fifth of that of the oxidised films sputtered under the former conditions.

It is concluded that there is a critical oxygen pressure, below which tantalum metal is sputtered and undergoes reaction at the substrate, and above which tantalum oxide is sputtered from an oxide surface as the result of reaction at the target.

Keywords

Partial Pressure Oxygen Content Electron Diffraction Oxidise Film Deposition Rate 

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References

  1. 1.
    D. A. McLean, N. Schwartz, and E. D. Tidd, Proc IEEE 52 (1964) 1450.Google Scholar
  2. 2.
    N. Schwartz and R. W. Berry, “Physics of Thin Films”, Vol. 2 (Academic Press, New York, 1964) p. 363.Google Scholar
  3. 3.
    D. Gerstenberg and C. J. Calbick, J. Appl. Phys. 35 (1964) 402.Google Scholar
  4. 4.
    E. Krikorian and R. J. Sneed, ibid 37 (1966) 3674.Google Scholar
  5. 5.
    N. Schwartz, Trans. 10th Nat. Vac. Symp. (American Vacuum Society, 1963 p. 325.Google Scholar
  6. 6.
    M. Koedam, Phillips Res. Reports 16 (1961) 101.Google Scholar
  7. 7.
    P. N. Denbigh and R. B. Marcus, J. Appl. Phys. 37 (1966) 4325.Google Scholar
  8. 8.
    K. L. Chopra, M. R. Randlett, and R. H. Duff, Phil. Mag. 16 (1967) 261.Google Scholar
  9. 9.
    M. G. Cowgill and J. Stringer, J. Less-Common Metals 2 (1960) 233.Google Scholar
  10. 10.
    P. Kofstad, J. Inst. Metals 90 (1961–2) 253.Google Scholar
  11. 11.
    G. K. Wehner, Annual Report on Sputtering Yields, Mechanical Division of General Mills Inc., Research Department (1959–60). (National Lending Library (UK), Cat. No. 6413-35F).Google Scholar
  12. 12.
    P. J. Harrop and D. S. Campbell, “Handbook of Thin Film Technology”, edited by R. Glang and L. I. Maissel (McGraw-Hill, New York, to be published in 1968).Google Scholar
  13. 13.
    P. A. Walley and A. K. Jonscher, Thin Solid Films 1 (1967–8) 367.Google Scholar
  14. 14.
    P. Stuart, National Physical Laboratory, Teton, Middx, UK, private communication.Google Scholar
  15. 15.
    R. W. Hoffman, “Thin Films” (Amer. Soc. Metals, 1964, p. 99.Google Scholar
  16. 16.
    D. S. Campbell, “Handbook of Thin Film Technology”, edited by R. Glang and L. I. Maissel (McGraw-Hill, New York, to be published in 1968).Google Scholar
  17. 17.
    R. E. Pawel and J. J. Campbell, Acta. Met. 14 (1966) 1827.Google Scholar

Copyright information

© Chapman and Hall 1968

Authors and Affiliations

  • E. Hollands
    • 1
  • D. S. Campbell
    • 1
  1. 1.Allen Clark Research CentreThe Plessey Company LimitedCaswell, TowcesterUK

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